New Striker® FE enhanced atomic layer deposition platform addresses semiconductor manufacturing challenges for 3D NAND, DRAM, and Logic chipmakers
FREMONT, Calif., Sept. 22, 2020 /PRNewswire/ -- Lam Research Corp. (Nasdaq: LRCX) today announced the advanced Striker® FE platform, a new processing solution for manufacturing high-aspect-ratio chip architectures. Striker FE utilizes an innovative, first of its kind ICEFill™ technology for filling extreme structures in 3D NAND, DRAM, and logic devices at emerging nodes. This system delivers the continued cost and technology scaling that is required to meet the semiconductor industry roadmap.
Lam Research Advanced Striker® FE Platform
Traditional methods of gapfill for semiconductor manufacturing include legacy chemical vapor deposition, diffusion/furnace, and spin-on processes. These techniques are no longer viable for today's 3D NAND requirements, as they are limited by the tradeoffs between quality, shrinkage, and gapfill voids. In contrast, Lam's Striker ICEFill harnesses a proprietary surface modification technique to achieve highly preferential bottom-up and void-free gapfill while retaining the film quality inherent to atomic layer deposition (ALD). The ICEFill technology removes the existing limitations for filling high-aspect-ratio features which are especially prevalent in 3D NAND devices, as well as prevents collapse issues in DRAM and logic devices.
"Our goal is to provide customers with the most enabling ALD technology," said Sesha Varadarajan, senior vice president and general manager of the Deposition product group at Lam Research. "This technology combines the ability to produce high quality oxide films with superior gapfill performance, in a single processing system with the productivity advantages offered by our industry leading quad station module architecture."
The Striker FE platform with ICEFill technology is part of the Striker ALD product family. For more information about the Striker product family visit the product page.
About Lam Research
Lam Research Corporation is a global supplier of innovative wafer fabrication equipment and services to the semiconductor industry. As a trusted, collaborative partner to the world's leading semiconductor companies, we combine superior systems engineering capability, technology leadership, and unwavering commitment to customer success to accelerate innovation through enhanced device performance. In fact, today, nearly every advanced chip is built with Lam technology. Lam Research (Nasdaq: LRCX) is a FORTUNE 500® company headquartered in Fremont, Calif., with operations around the globe. Learn more at . (LRCX-P)
Caution Regarding Forward-Looking Statements
Statements made in this press release that are not of historical fact are forward-looking statements and are subject to the safe harbor provisions created by the Private Securities Litigation Reform Act of 1995. Such forward-looking statements relate to, but are not limited to: the performance of the tools we sell or service and the productivity advantages of Lam equipment. These statements are based on current expectations and are subject to risks, uncertainties, and changes in condition, significance, value and effect including those risks and uncertainties that are described in the documents filed or furnished by us with the Securities and Exchange Commission, including specifically the Risk Factors described in our annual report on Form 10-K for the fiscal year ended June 28, 2020. These uncertainties and changes could materially affect the forward-looking statements and cause actual results to vary from expectations in a material way. The Company undertakes no obligation to update the information or statements made in this release.
Company Contacts:
Libra White
Media Relations
(510) 572-7725
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Investor Relations
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新的Striker®FE增強型原子層沉積平台解決了3D NAND、DRAM和邏輯芯片製造商面臨的半導體制造挑戰
加利福尼亞州弗裏蒙特,9月2020年22日/美通社/--LAM研究公司(納斯達克市場代碼:LRCX)今天宣佈推出先進的STRKER®FE平台,這是一種用於製造高深寬比芯片架構的新工藝解決方案。Striker FE採用首創的ICEFill™技術,在3DNAND、動態隨機存儲器和新興節點的邏輯器件中填充極端結構。該系統提供滿足半導體行業路線圖所需的持續成本和技術擴展。
LAM Research Advanced Striker®FE平台
半導體制造的傳統填隙方法包括傳統的化學氣相沉積法、擴散/熔鍊法和旋轉法。這些技術不再適用於今天的3D NAND要求,因為它們受到質量、收縮和縫隙填充空隙之間權衡的限制。相比之下,LAM的前鋒ICEFill利用一種專有的表面改性技術,在保持原子層沉積(ALD)固有的薄膜質量的同時,實現了高度優先的自下而上和無孔隙的縫隙填充。ICEFill技術消除了填充在3D NAND設備中特別普遍的高深寬比功能的現有限制,並防止了DRAM和邏輯設備中的崩潰問題。
LAM Research公司高級副總裁兼沉積產品部總經理Sesha Varadarajan表示:“我們的目標是為客户提供最有效的ALD技術。”這項技術在單一處理系統中結合了生產高質量氧化膜的能力和優異的縫隙填充性能,以及我們業界領先的四站模塊架構所提供的生產率優勢。“
採用ICEFill技術的Striker FE平台是Striker ALD產品系列的一部分。有關Striker產品系列的更多信息,請訪問產品頁面。
關於LAM研究
LAM研究公司是一家為半導體行業提供創新晶片製造設備和服務的全球供應商。作為全球領先半導體公司值得信賴的合作伙伴,我們將卓越的系統工程能力、技術領先地位和對客户成功的堅定不移的承諾結合在一起,通過增強器件性能來加速創新。事實上,今天,幾乎每一塊先進的芯片都是用LAM技術製造的。LAM研究公司(納斯達克市場代碼:LRCX)是一家財富500強公司,總部設在加利福尼亞州弗裏蒙特,業務遍及全球。瞭解更多信息,請訪問。(LRCX-P)
有關前瞻性陳述的注意事項
本新聞稿中非歷史事實的陳述為前瞻性陳述,受1995年“私人證券訴訟改革法”規定的安全港條款的約束。此類前瞻性陳述涉及但不限於:我們銷售或服務的工具的性能以及LAM設備的生產率優勢。這些陳述基於當前預期,受風險、不確定性以及條件、意義、價值和效果變化的影響,包括我們提交給美國證券交易委員會(SEC)的文件中描述的風險和不確定性,特別是我們截至2020年6月28日的財政年度Form 10-K年度報告中描述的風險因素。這些不確定性和變化可能對前瞻性陳述產生重大影響,並導致實際結果與預期大不相同。本公司不承擔更新本新聞稿中的信息或陳述的義務。
公司聯繫人:
天秤座·懷特
媒體關係
(510) 572-7725
拉姆·加內什
投資者關係
(510) 572-1615
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