RTX Has Been Awarded A 3-Year, 2-Phase Contract From DARPA To Develop Foundational Ultra-Wide Bandgap Semiconductors
RTX Has Been Awarded A 3-Year, 2-Phase Contract From DARPA To Develop Foundational Ultra-Wide Bandgap Semiconductors
New class of materials offer improved conductivity and thermal management properties
新型材料類別提供了改進的導電性和熱管理性能
ANDOVER, Mass., Oct. 2, 2024 /PRNewswire/ -- Raytheon, an RTX (NYSE:RTX) business, has been awarded a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors, or UWBGS, based on diamond and aluminum nitride technology that revolutionize semiconductor electronics with increased power delivery and thermal management in sensors and other electronic applications.
馬薩諸塞州安多弗，2024年10月2日 / PRNewswire / - 瑞聲公司，一個RTX（紐交所：RTX）業務，已獲得從DARPA獲得爲期三年的兩階段合同，旨在開發基於金剛石和氮化鋁技術的基礎超寬禁帶半導體，或UWBGS，以增加半導體電子設備的功率輸出和傳感器等其他電子應用的熱管理。
During phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminum nitride technology onto larger diameter wafers for sensor applications.
在合同的第一階段，瑞聲高級技術團隊將開發金剛石和氮化鋁半導體薄膜及其在電子設備上的集成。第二階段將專注於優化和完善金剛石和氮化鋁技術，以將其應用於更大直徑的晶片用於傳感器應用。
譯文內容由第三人軟體翻譯。