Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging
Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging
World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs
世界領先的溫度表現使得低溫運行、快速切換的650 V和1200 V SiC MOSFET能夠支持多達3倍更強大的人工智能數據中心和更快的充電電動汽車。
Torrance, CA – June 6th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, announces their new portfolio of Gen-3 'Fast' (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
加州託倫斯—2024年6月6日—Navitas Semiconductor (納斯達克股票代碼:NVTS)是全球領先、唯一的、純粹的下一代功率半導體公司，成立於2014年，致力於10年以上的功率創新。（納斯達克：NVTS）是下一代GaNFast氮化鎵（GaN）和GeneSiC碳化硅（SiC）電力半導體的行業領先者，宣佈了他們的新組合Gen-3 'Fast' (G3F) 650 V和1200 V SiC MOSFET，針對最快的切換速度、最高的效率和增加功率密度的優化，在人工智能數據中心電源、車載充電器（OBCs）、快速道路超級充電器和太陽能/儲能系統（ESS）等領域應用。廣泛的組合範圍涵蓋了D2PAK-7到TO-247-4的行業標準封裝，爲要求嚴格、高功率、高可靠性的應用而設計。
The G3F family is optimized for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
G3F系列針對高速開關性能進行了優化，與CCM TPPFC系統中的競爭者相比，硬開關優點（FOMs）有40%的提高，這將使下一代AI電源供應單元（PSUs）的功率達到10 kW，並使每個機架的功率從30 kW增加到100-120 kW。
The G3F GeneSiC MOSFETs are developed using a proprietary 'trench-assisted planar' technology. and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
G3F GeneSiC MOSFET是使用專有的“溝槽輔助平面”技術開發的，提供比溝槽MOSFET更好的性能，同時提供比競爭對手更優越的健壯性、可製造性和成本效益。G3F MOSFET通過高效率和高速性能實現高效率，在實際運行中比競爭對手能夠承受更高的溫度。G3F MOSFET模塊溫度低，可以降低高達25°C的情況，比其他供應商的SiC產品壽命長達3倍。
The 'trench-assisted planar' technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared to competition.
“溝槽輔助平面”技術可以在溫度上極低的RDS（ON）在溫度上升時增加，從而在完整操作範圍內提供最低功率損失，並在實際操作高溫時比競爭對手提供高達20%更低的RDS（ON）“G3F爲高效、低溫運行的SiC性能制定了新的標準，同時具有高功率、高應力系統的高可靠性和健壯性，”SiC技術和操作高級副總裁Sid Sundaresan博士指出，“我們正在推動SiC的界限，切換速度高達600 kHz，開關損耗優於競爭對手40%。”
Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.
此外，所有GeneSiC MOSFET均具有最高發布的100％測試的雪崩能力，30％更長的短路耐受時間和緊密的閾值電壓分佈，易於並聯，非常適合高功率，快速上市的應用。
Navitas' latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% is realized, which comfortably achieves 'Titanium Plus' efficiency standards, now mandatory in Europe.
Navitas最新的4.5 kW高功率密度AI服務器PSU參考設計採用CRPS185外型尺寸，展示650 V額定值，40 mOhms G3F FET以交錯CCM TP PFC拓撲結構實現。與LLC階段的GaNSafe Power ICs一起，實現138 W / inch3的功率密度和高達97％的峯值效率，輕鬆達到歐洲的“Titanium Plus”效率標準。
For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas' new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.
對於EV市場，1,200 V / 34 mOhm（G3F34MT12K）G3F FET使Navitas的新款22 kW，800V雙向OBC和3KW DC-DC轉換器實現卓越的3.5 kW / L功率密度和95.5％的峯值效率。
"G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems," noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. "We're pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition."
（納斯達克：NVTS）是唯一一家純粹的下一代功率半導體公司，爲高功率、高應力系統的應用提供卓越的GaN和SiC解決方案。
Parts are available now to qualified customers. Please contact sicsales@navitassemi.com for more information.
零件現在可供合格客戶使用。 請聯繫sicsales@navitassemi.com了解更多信息。
About Navitas
關於Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas was the world's first semiconductor company to be CarbonNeutral-certified.
Navitas Semiconductor (納斯達克股票代碼:NVTS)是全球領先、唯一的、純粹的下一代功率半導體公司，成立於2014年，致力於10年以上的功率創新。CarbonNeutral認證，企業市場副總裁Stephen Oliver指出10年的功率創新。GaNFast功率IC集成了氮化鎵(GaN)功率和驅動、控制、感知和保護，以實現更快的充電、更高的功率密度和更大的能源節省。補充的GeneSiC功率器件是優化的高功率、高電壓和高可靠性的碳化硅(SiC)解決方案。重點市場包括電動汽車、太陽能、能源存儲、家電/工業、數據中心、移動和消費品。Navitas擁有超過250項已頒發或待批准的專利。Navitas是世界上第一家獲得CarbonNeutral認證的半導體公司。補充說明，GaNFast功率IC集成了氮化鎵(GaN)功率和驅動、控制、感知和保護，以實現更快的充電、更高的功率密度和更大的能源節省。GeneSiC功率器件是優化的高功率、高電壓和高可靠性的碳化硅(SiC)解決方案。重點市場包括電動汽車、太陽能、能源存儲、家電/工業、idc概念、移動和消費品。獲得碳中和認證.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Navitas Semiconductor、GaNFast、GanSense、GeneSiC和Navitas標誌是Navitas Semiconductor Limited及其附屬公司的商標或註冊商標。所有其他品牌、產品名稱和商標均爲其各自所有者用於標識其產品或服務的商標或註冊商標。
Contact:
聯繫方式：
Llew Vaughan-Edmunds, Senior Director of Corporate Marketing & Product Management
Llew Vaughan-Edmunds，企業營銷和產品管理高級總監
Stephen Oliver, VP of Corporate Marketing
Stephen Oliver，企業市場副總裁
譯文內容由第三人軟體翻譯。