On Thursday, Micron Technology, Inc (NASDAQ:MU) announced signing a non-binding Preliminary Memorandum of Terms (PMT) for $6.1 billion in funding under the CHIPS and Science Act.
This funding will support Micron's planned leading-edge memory manufacturing in Idaho and New York.
The CHIPS and Science Act will allocate $6.1 billion in grants to aid Micron's commitment to investing about $50 billion in gross capital expenditures for domestic leading-edge memory manufacturing through 2030.
These grants and additional state and local incentives will facilitate the construction of one leading-edge memory manufacturing facility next to Micron's existing leading-edge R&D facility in Boise, Idaho, and two leading-edge memory facilities in Clay, New York.
Today's announcement marks the first phase of Micron's strategy to establish a leading-edge R&D and manufacturing center in Boise, Idaho, and a four-fab manufacturing complex in Clay, New York, over the next twenty-plus years.
This strategy involves a potential investment of up to $125 billion and aims to grow Micron's memory bit supply to match long-term industry demand growth.
Micron's planned advanced semiconductor manufacturing facilities will likely generate approximately 75,000 domestic jobs over the next 20-plus years.
Analysts have highlighted Micron's leadership in the high-bandwidth memory (HBM) product sector, with HBM3E offering 30% greater power efficiency than competitors, translating into significant revenue visibility.
Micron projects that its market share in HBM will match its broader DRAM market share by 2025. Adopting HBM could significantly influence Micron's gross margins, potentially restoring them to peak levels seen in memory cycles, as per analysts.
Price Action: MU shares traded lower by 0.05% at $111.72 on the last check Thursday.
Disclaimer: This content was partially produced with the help of AI tools and was reviewed and published by Benzinga editors
週四,美光科技公司(納斯達克股票代碼:MU)宣佈簽署一份不具約束力的初步條款備忘錄(PMT),根據CHIPS和科學法案提供61億美元的融資。
這筆資金將支持美光計劃在愛達荷州和紐約州製造尖端存儲器。
CHIPS與科學法案將撥款61億美元,以幫助美光承諾到2030年投資約500億美元的總資本支出,用於國內領先的存儲器製造。
這些補助金以及額外的州和地方激勵措施將促進在美光位於愛達荷州博伊西的現有尖端研發設施旁邊建造一座前沿存儲器製造工廠,以及在紐約克萊的兩座前沿存儲器設施的建設。
今天的公告標誌着美光戰略的第一階段,即在未來二十多年內在愛達荷州博伊西建立一個領先的研發和製造中心,並在紐約克萊建立一個四晶圓廠的製造中心。
該戰略涉及高達1250億美元的潛在投資,旨在增加美光的存儲位供應,以滿足行業長期需求的增長。
美光計劃中的先進半導體制造設施可能會在未來20多年內創造約75,000個國內就業機會。
分析師強調了美光在高帶寬存儲器 (HBM) 產品領域的領導地位,HBM3E 的能效比競爭對手高出 30%,轉化爲顯著的收入可見度。
美光預計,到2025年,其在HBM中的市場份額將與其更廣泛的DRAM市場份額相當。分析師認爲,採用HBM可能會顯著影響美光的毛利率,有可能將其恢復到存儲週期中的峯值水平。
價格走勢:在週四的最後一次支票中,MU股價下跌0.05%,至111.72美元。
免責聲明: 該內容部分是在人工智能工具的幫助下製作的,並由Benzinga編輯審查和發佈