Vancouver, BC, July 19, 2023 (GLOBE NEWSWIRE) -- Ceylon Graphite Corp. ("Ceylon") (TSX-V: CYL) (OTC: CYLYF) (FSE: CCY) is pleased to announce that Ceylon graphite achieved new concentration and conductivity records when studied in the manufacture of an adaptable sensing platform for chemical sensing. The research, published in the Royal Society of Chemistry's "Nanoscale" Journal, was conducted by partners at the Molecular Sciences Research Hub at Imperial College London and specifically incorporated Ceylon's vein graphite to produce a low-surface-tension sprayable graphene ink that was key to the sensor's functionality.
A summary of the test results, completed in January 20231 is highlighted below:
- Ceylon graphite was used to create high concentration, graphene/polyvinylpyrrolidone inks, with record-breaking concentrations as high 3.2 mg mL−1.
- Raman spectroscopy was used to show high-quality graphene flakes produced via liquid phase exfoliation.
- The Ceylon-based graphene device was successfully used to detect for pH within the range of pH 3 – 11.
- These results demonstrate the potential of high-quality graphite to empower the next generation of nanomaterial-based diagnostics for biological and chemical sensing.
"Our findings highlight the promising pH sensing capabilities of the Ceylon graphene-based devices for pH sensing, which can be deployed for a variety of medical and environmental applications," said Dr. Felice Torrisi, corresponding author of this work and principal investigator. "In particular, the sprayed "Electrolyte-gated Graphene Field-effect transistor" (EG-GFET) fabricated using Ceylon graphite outperforms any other EG-GFET prepared by any other technique, demonstrating the unique characteristics of Ceylon graphite for high quality graphene inks with electronic grade suitable for large area printed electronics, integrated circuits and sensing. We see this as a breakthrough with Ceylon vein graphite aiming to uncap the potential of graphene inks for printed electronics by demonstrating high-performance devices suitable for applications ranging from flexible and wearable electronics to sensing and automotive."
"We are thrilled that world-leading researchers have discovered the advantages of our high-carbon vein graphite and its potential applications in the worlds of graphene and nano-technologies," said Ceylon CEO, Sasha Jacob. "This is a key area of our future development and one that provides high-margin value-added products to our portfolio."
Dr. Felice Torrisi is a Senior Lecturer in Chemistry of 2D materials and Wearable Electronics in the Department of Chemistry at Imperial College London and Fellow of Trinity College, Cambridge. He previously held a University Lectureship in Graphene Technology in the Department of Engineering at the University of Cambridge, where he jointly managed the Centre for Doctoral Training in Graphene Technology and the Cambridge Graphene Centre.
Results in Summary:
Graphene ink formulation
Graphene inks have emerged as a new revolutionary element for high-performance printed, flexible and wearable electronics.2 Among the various methods available for preparing graphene ink, sonication-assisted liquid-phase exfoliation (LPE) has been chosen due to its simplicity and compatibility with low-boiling solvents. This process involves subjecting graphite (in powder or flakes) and low-boiling point solvents, such as 2-propanol (IPA), along with small amounts (20 mg) of the polymer stabiliser, resulting in a graphene ink with desired electronic propertied for printed electronics and significantly enhanced shelf life of the ink. IPA was selected as the solvent for the graphene ink as it has a boiling point of 82 °C and impressively low surface tension of only 20.34 mN m−1, satisfying the criteria for a scalable spray-coating as well as inkjet printing of the optimised ink.3 The sonication process lasts for 9 hours, ensuring thorough exfoliation of the graphite flakes. Centrifugation at 2.000 – 13,000 g is then employed to further refine the ink and effectively eliminate any remaining unexfoliated flakes.
The optical absorption spectrum (OAS) of the graphene ink, as depicted in Figure 1a, exhibits the characteristic profile associated with graphene inks, a flat absorption pattern in the visible spectrum and a distinctive peak in the UV region, confirms the ink is mainly composed by high-quality graphene flakes. The concentration of graphene flakes in the ink is estimated to be ~ 1 mg mL-1 when centrifuged at 13,000 g and as high as 3.2 mg mL−1 when centrifuged at 2,300 g (Figure 1b). This concentration surpasses those reported in the literature for graphene inks stabilised by polyvinylpyrrolidone (PVP) by an order of magnitude, underscoring the exceptional quality and potential of this formulation.
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Figure 1: Ceylon inks show optimal graphene/PVP ink concentrations. a) OAS data for Ceylon-based graphene/PVP ink. b) Ceylon-based graphene/PVP ink can accommodate > × 3 the flake concentration than previously reported inks when prepared under similar conditions.
Application: A graphene field-effect transistor as a scalable and low-cost high-performance biosensor
The EG-GFET channel is formed using an automatic spray-coating process, ensuring consistent and scalable deposition of the graphene ink onto the PCB test strip. The graphene ink exhibits excellent wetting properties that contribute to film uniformity. As the individual ink droplets merge into a thin film before evaporating, this wetting behaviour plays a vital role in achieving uniformity.
While the addition of PVP stabilizer enhances the concentration and stability of the ink, it is important to note that PVP is known to adversely affect the electrical conductivity of nanostructured graphene thin films due to its insulating properties. However, a solution has been found by utilizing a xenon intense pulsed light (IPL) source, which effectively degrades the PVP polymer without subjecting the PCB substrate to temperatures exceeding its decomposition threshold. This method proves to be the most suitable for this specific application. The spray coated graphene ink achieved an approximate channel resistivity of 100 Ω after IPL annealing suitable for flexible and plastic electronics and currently used in industry.
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Figure 2: Photonic annealing of Ceylon-based graphene improves electrical properties. a) Raman spectroscopy data indicating the absence of noticeable modification upon photonic annealing. b) IPL annealing causes a decrease in resistance of the graphene film.
The quality of the graphene flakes is assessed using Raman spectroscopy. Figure 2a displays typical Raman spectra of the graphene ink deposited on Si/SiO2, before and after photonic annealing (black and red curves, respectively), to monitor any potential effects on the SLG/FLG flakes. The red and black curves in Figure 2a exhibit the characteristic D peaks at approximately 1346 cm−1, 2D peaks at approximately 2690 cm−1, and G peaks at approximately 1581 cm−1 (red) and 1580 cm−1 (black). The D peak displays a full-width at half maximum (FWHM) of 37.9 cm−1 (red) and 38.9 cm−1 (black). These values align with those reported for LPE graphene inks indicating the high quality of the SLG and FLG flakes in the graphene ink and the absence of noticeable modifications upon photonic annealing.
To assess the impact of photonic annealing on the electrical resistance of the EG-GFET channel, the PCB test strip is exposed to three different intensities of xenon IPL (IPL) energy. The exposure at 2.5 J cm−2, 3.75 J cm−2, and 5.0 J cm−2 results in a similar decrease in resistance from 310 Ω (not annealed, red curve) to 112 Ω, 108 Ω, and 115 Ω, respectively. Consequently, the lowest IPL energy (2.5 J cm−2) is employed for all subsequent experiments, ensuring an enhanced channel resistance while minimising the risk of PCB damage.
The response of the EG-GFETs to variations in pH was investigated by conducting experiments that involved altering the pH of the solution using a strong base or acid, while monitoring the corresponding response. The obtained results reveal valuable insights into the pH sensitivity of the EG-GFETs. Figure 3a illustrates the relationship between the drain current (ID) and the gate-source voltage (VGS) for the EG-GFETs exposed to pH values ranging from 3 to 11. Notably, the plot exhibits a discernible shift of the Dirac point from 60 mV to 270 mV, indicating the sensitivity of the devices to changes in pH. It is important to highlight that this pH sensitivity is attributed to the type and density of unintentional defects introduced during the LPE process.
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Figure 3: pH response of Ceylon-based graphene chemical sensor. a) Shift in characteristic electrical transfer curves of EG-GFETs to changing solution pH. b) Transient pH change within the range of 7.2 – 7.5 pH units.
The corresponding pH-dependent shift in the Dirac point is depicted in Figure 3a, showcasing a maximum Dirac point of 270 mV at pH 11. A linear fit analysis of the Dirac point values (red dashed line) reveals a sensitivity of 25.8 ± 0.5 mV per pH within the linear pH range of 11 to 3. While this sensitivity falls below the theoretical maximum predicted by the Nernst equation (59.16 mV per pH), it outperforms graphene pH sensors prepared using alternative graphene fabrication techniques, such as chemical vapor deposition (CVD)-grown graphene on SiO2 (21–22 mV per pH), suspended graphene (17 mV per pH), epitaxial graphene on silicon carbide (19 mV per pH), and mechanically exfoliated graphene on SiO2 (20 mV per pH). Moreover, transient pH changes observed in Figure 3b, show how the graphene devices respond to pH changes in < 10s, with a resolution as small as 0.04 pH units. These findings highlight the promising pH sensing capabilities of the Ceylon graphene-based devices for pH sensing, which can be deployed for a variety of medical and environmental applications.
Concluding remarks:
Ceylon has the correct characteristics to become a key player in graphene ink preparation, and achieved the highest concentrations of graphene flakes in the inks, as estimated using OAS. This high concentration of graphene flakes offers several advantages during the spray coating process. Firstly, it promotes improved uniformity in the deposition of the graphene ink. Additionally, the increase in graphene to PVP ratio leads to enhanced flake conductivity, as excessive PVP deposition can hinder conductivity. Raman spectroscopy analysis of the functionalized graphene ink demonstrated results consistent with those observed in LPE graphene, indicating a low defect area. This characteristic further enhances the overall quality and performance of the graphene ink.
The combination of these unique properties enabled the successful detection of pH using a Lab-on-PCB architecture for the first time. The graphene-based sensor exhibited a pH sensitivity of 25 mV per pH unit, showcasing its ability to precisely measure pH variations. Furthermore, the response times of the sensor were found to be less than 10 seconds, highlighting its rapid and efficient performance. This breakthrough in pH sensing utilizing the Lab-on-PCB platform demonstrates the potential of Ceylon-derived graphene in enabling advanced sensing technologies
About Ceylon Graphite Corp.
Ceylon is a public company listed on the TSX Venture Exchange, that is in the business of mining for graphite, and developing and commercializing innovative graphene and graphite applications and products. Graphite mined in Sri Lanka is known to be some of the highest grade in the world and has been confirmed to be suitable to be easily upgradable for a range of applications including the high-growth electric vehicle and battery storage markets as well as construction, healthcare and paints and coatings sectors. The Government of Sri Lanka has granted the Ceylon's wholly owned subsidiary Sarcon Development (Pvt) Ltd. an IML Category A license for its K1 mine and exploration rights in a land package of over 120km2. These exploration grids (each one square kilometer in area) cover areas of historic graphite production from the early twentieth century and represent a majority of the known graphite occurrences in Sri Lanka.
Further information regarding Ceylon is available at
Sasha Jacob, Chief Executive Officer and Rita Thiel, Chair of the Board of Directors
info@ceylongraphite.com
Corporate Communications
+1(604) 924-8695
Neither TSX Venture Exchange nor its Regulation Services Provider (as that term is defined in policies of the TSX Venture Exchange) accepts responsibility for the adequacy or accuracy of this release
FORWARD LOOKING STATEMENTS:
This news release contains forward-looking information as such term is defined in applicable securities laws, which relate to future events or future performance and reflect management's current expectations and assumptions. The forward-looking information includes statements about the potential value of graphene inks produced with Ceylon graphite, applications for future graphene ink technologies, Ceylon's role as a potential market leader in graphene ink technology preparation, expectations related to development of Ceylon's properties, strategic partnerships, potential customers and sales, plans for Ceylon's subsidiaries and Ceylon's mining operations. Such forward-looking statements reflect management's current beliefs and are based on assumptions made by and information currently available to Ceylon e, including the assumption that, there are no material adverse changes effecting development and production at the M1 mine or on other properties, testing related to the performance of Ceylon's vein graphite material are accurate, there will be no material adverse change in graphite and metal prices, there will be continued demand for graphite powered batteries, all necessary consents, licenses, permits and approvals will be obtained, including various Local Government Licenses. Investors are cautioned that these forward-looking statements are neither promises nor guarantees and are subject to risks and uncertainties that may cause future results to differ materially from those expected. Risk factors that could cause actual results to differ materially from the results expressed or implied by the forward-looking information include, among other things, the results of Ceylon's graphite testing being inaccurate or incomplete, the market for graphene ink related technologies not developing as expected, failure to obtain or maintain patents and proprietary technology, loss or failure to acquire available high quality graphite, any failures to obtain or delays in obtaining required regulatory licenses, permits, approvals and consents, an inability to access financing as needed, a general economic downturn, a volatile stock price, labour strikes, political unrest, changes in the mining regulatory regime governing Ceylon, a failure to comply with environmental regulations and a weakening of market and industry reliance on high quality graphite. Ceylon cautions the reader that the above list of risk factors is not exhaustive.
1 Fenech-Salerno, B., Holicky, M., Yao, C., Cass, A. E. G. & Torrisi, F. A Sprayed Graphene Transistor Platform for Rapid and Low-Cost Chemical Sensing. Nanoscale 15, 3243-3254. (2023).
2 Torrisi, F. & Carey, T. Graphene, related two-dimensional crystals and hybrid systems for printed and wearable electronics. Nano Today 23, 73–96 (2018).
3 Lefebvre, A. H. & Mcdonell, V. G. General Considerations. in Atomization and Sprays (eds. Brenn, G., Hung, D. L. S., Herrmann, M. & Chigier, N.) 1–16 (Taylor & Francis Group, 2017).
不列顛哥倫比亞省溫哥華,2023年7月19日(GLOBE NEWSWIRE)——錫蘭石墨公司(“錫蘭”)(多倫多證券交易所股票代碼:CYL)(場外交易代碼:CLYF)(FSE:CCY)欣然宣佈,錫蘭石墨在製造適應性強的化學傳感平台時進行了研究,創下了新的濃度和電導率記錄。這項研究發表在英國皇家化學學會的《納米尺度》雜誌上,由倫敦帝國理工學院分子科學研究中心的合作伙伴進行,特別結合了錫蘭的靜脈石墨來生產一種低表面張力的可噴塗石墨烯墨水,這是傳感器功能的關鍵。
測試結果摘要,於 2023 年 1 月完成1 在下面突出顯示:
- 錫蘭石墨被用來製造高濃度的石墨烯/聚乙烯吡咯烷酮油墨,其濃度創歷史新高 3.2 mg mL−1。
- 拉曼光譜用於顯示通過液相剝離產生的高質量石墨烯薄片。
- 基於錫蘭的石墨烯設備成功用於檢測 pH 3 — 11 範圍內的pH 值。
- 這些結果表明,高質量石墨有可能爲下一代基於納米材料的生物和化學傳感診斷提供支持。
這項研究的通訊作者、首席研究員費利斯·托里****說:“我們的發現突顯了基於錫蘭石墨烯的pH傳感器件具有令人鼓舞的pH傳感能力,可以應用於各種醫療和環境應用。”“特別是,使用錫蘭石墨製造的噴塗的 “電解質門控石墨烯場效應晶體管”(EG-GFET)的性能優於任何其他技術製備的任何其他EG-GFET,這表明了錫蘭石墨在高質量石墨烯墨水方面的獨特特性,其電子級適用於大面積印刷電子、集成電路和傳感。我們認爲這是一項突破,錫蘭脈石墨旨在通過展示適用於從柔性和可穿戴電子設備到傳感和汽車等應用的高性能器件,從而挖掘石墨烯墨水在印刷電子領域的潛力。”
錫蘭首席執行官薩莎·雅各布說:“我們很高興世界領先的研究人員發現了我們的高碳脈石墨的優勢及其在石墨烯和納米技術領域的潛在應用。”“這是我們未來發展的關鍵領域,也是爲我們的產品組合提供高利潤增值產品的領域。”
Felice Torrisi博士是倫敦帝國理工學院化學系二維材料和可穿戴電子化學高級講師,劍橋三一學院院士。他之前曾在劍橋大學工程系擔任石墨烯技術大學講座,共同管理石墨烯技術博士培訓中心和劍橋石墨烯中心。
結果摘要:
石墨烯墨水配方
石墨烯墨水已成爲高性能印刷、柔性和可穿戴電子產品的新革命性元素。2 在製備石墨烯墨水的各種方法中,之所以選擇超聲波輔助液相剝離(LPE),是因爲它的簡單性以及與低沸點溶劑的兼容性。該過程涉及使用石墨(粉末或薄片)和低沸點溶劑,例如2-丙醇(IPA),以及少量(20 mg)的聚合物穩定劑,從而產生具有印刷電子產品所需電子特性的石墨烯墨水,並顯著延長墨水的保質期。IPA 之所以被選爲石墨烯墨水的溶劑,是因爲它的沸點爲 82 °C,表面張力極低,僅爲 20.34 mN m−1,滿足可擴展噴塗和噴墨打印的標準,優化後的墨水也符合噴墨打印的標準。3 超聲處理過程持續 9 小時,確保石墨片徹底去除角質。然後使用 2.000 — 13,000 g 的離心法進一步提煉墨水,有效去除任何剩餘的未去角質的薄片。
如圖 1a 所示,石墨烯墨水的光吸收光譜 (OAS) 表現出與石墨烯墨水相關的特徵輪廓、可見光譜中的平坦吸收圖案和紫外線區域的獨特峯值,這證實了墨水主要由高質量的石墨烯薄片組成。據估計,墨水中石墨烯薄片的濃度約爲 1 mg mL-1 在 13,000 g 和高達 3.2 mg mL 的溫度下離心時−1 在 2,300 g 的重量下離心時(圖 1b)。這種濃度比文獻中報道的由聚乙烯吡咯烷酮(PVP)穩定的石墨烯墨水的濃度高出一個數量級,這突顯了該配方的卓越質量和潛力。
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圖 1:錫蘭油墨顯示出最佳的石墨烯/PvP 墨水濃度。a) 錫蘭基石墨烯/PvP 墨水的 OAS 數據。b) 錫蘭基石墨烯/PvP 墨水在類似條件下製備時,可以容納比先前報告的油墨的片狀濃度大於 × 3。
應用:石墨烯場效應晶體管作爲可擴展且低成本的高性能生物傳感器
EG-GFET 通道採用自動噴塗工藝形成,可確保石墨烯墨水在 PCB 測試條上均勻且可擴展地沉積。石墨烯墨水具有出色的潤溼特性,有助於提高薄膜均勻性。由於單個墨滴在蒸發之前會合併成薄膜,因此這種潤溼行爲在實現均勻性方面起着至關重要的作用。
雖然添加PVP穩定劑可以增強墨水的濃度和穩定性,但值得注意的是,衆所周知,PVP由於其絕緣特性會對納米結構石墨烯薄膜的電導率產生不利影響。但是,已經通過使用氙氣強脈衝光(IPL)源找到了解決方案,該光源可以有效地降解PVP聚合物,而不會使PCB基板承受超過其分解閾值的溫度。事實證明,這種方法最適合這種特定應用。經過IPL退火後,噴塗石墨烯墨水的通道電阻率約爲100 Ω,適用於柔性和塑料電子產品,目前用於工業。
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圖 2:錫蘭基石墨烯的光子退火提高了電性能。a) 拉曼光譜數據表明光子退火時沒有明顯的修飾。b) IPL 退火會導致石墨烯薄膜的電阻降低。
使用拉曼光譜評估石墨烯薄片的質量。圖 2a 顯示了沉積在 Si/SiO 上的石墨烯墨水的典型拉曼光譜2,在光子退火之前和之後(分別爲黑色和紅色曲線),以監測對SLG/FLG薄片的任何潛在影響。圖 2a 中的紅黑曲線在大約 1346 cm 處表現出特徵 D 峯值−1,2D 峯值在大約 2690 厘米處−1,G 的峯值約爲 1581 厘米−1 (紅色)和 1580 厘米−1 (黑色)。D 峯值顯示的全寬半最大值 (FWHM) 爲 37.9 cm−1 (紅色)和 38.9 厘米−1 (黑色)。這些值與LPE石墨烯墨水報告的值一致,這表明石墨烯墨水中的SLG和FLG薄片質量很高,而且光子退火後沒有明顯的修改。
爲了評估光子退火對EG-GFET通道電阻的影響,PCB測試條暴露在三種不同強度的氙IPL(IPL)能量下。2.5 J 厘米處的曝光度−2,3.75 J cm−2,還有 5.0 J 厘米−2 導致電阻從310 Ω(未退火,紅色曲線)分別降低到112 Ω、108 Ω 和 115 Ω。因此,最低的 IPL 能量(2.5 J cm)−2)用於所有後續實驗,可確保增強通道電阻,同時最大限度地降低 PCB 損壞的風險。
通過進行實驗,研究了EG-GFET對pH變化的反應,這些實驗涉及使用強鹼或酸改變溶液的pH值,同時監測相應的反應。所獲得的結果揭示了對EG-GFETs的pH靈敏度的寶貴見解。圖 3a 說明了漏極電流之間的關係 (ID) 和柵源電壓 (V)GS)用於暴露在 3 到 11 之間的 pH 值的 eg-GFET。值得注意的是,該圖顯示了狄拉克點從60 mV到270 mV的明顯偏移,這表明設備對pH值變化的敏感度。必須強調的是,這種pH敏感度歸因於LPE過程中引入的無意缺陷的類型和密度。
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圖 3:基於 Ceylon 的石墨烯化學傳感器的 pH 響應。a) EG-GFET 的特徵電傳輸曲線隨着溶液的變化 pH 值而變化。b) 在 7.2 — 7.5 pH 單位範圍內的瞬態 pH 變化。
圖 3a 描繪了狄拉克點中相應的 pH 值相關偏移,顯示狄拉克點在 pH 11 時的最大狄拉克點爲 270 mV。對狄拉克點值(紅色虛線)的線性擬合分析顯示,在 11 到 3 的線性 pH 值範圍內,每個 pH 值的靈敏度爲 25.8 ± 0.5 mV。雖然該靈敏度低於 Nernst 方程預測的理論最大值(每個 pH 值爲 59.16 mV),但它 性能優於使用替代石墨烯製造技術製備的石墨烯 pH 傳感器,例如 SiO2 上化學氣相沉積 (CVD) 生長的石墨烯(每 pH 值爲 21—22 mV)、懸浮石墨烯(每 pH 值 17 mV)、碳化硅上的外延石墨烯(每個 pH 值 19 mV)和 SiO 上機械剝離的石墨烯2 (每個 pH 值爲 20 mV)。此外,在圖 3b 中觀察到的瞬態 pH 值變化顯示了石墨烯器件在 < 10 秒內對 pH 值變化的反應,分辨率低至 0.04 pH 單位。這些發現突顯了基於錫蘭石墨烯的pH傳感器件具有令人鼓舞的pH傳感能力,可用於各種醫療和環境應用。
結束語:
根據OAS的估計,錫蘭具有正確的特性,可以成爲石墨烯墨水製備的關鍵參與者,並且在墨水中實現了最高濃度的石墨烯薄片。這種高濃度的石墨烯薄片在噴塗過程中具有多種優點。首先,它有助於提高石墨烯墨水沉積的均勻性。此外,石墨烯與PVP比的增加會導致薄片導電性增強,因爲過多的PVP沉積會阻礙導電性。對功能化石墨烯墨水的拉曼光譜分析表明,結果與在LPE石墨烯中觀察到的結果一致,表明缺陷面積很低。這一特性進一步提高了石墨烯墨水的整體質量和性能。
這些獨特特性的結合使人們首次使用Lab-on-PCB架構成功檢測pH值。基於石墨烯的傳感器的pH靈敏度爲每pH單位25 mV,這表明其精確測量 pH 值變化的能力。此外,發現傳感器的響應時間小於10秒,這突顯了其快速高效的性能。利用Lab-on-PCB平台在pH傳感方面的這一突破證明了錫蘭衍生的石墨烯在實現先進傳感技術方面的潛力
關於錫蘭石墨公司
錫蘭是一家在多倫多證券交易所風險投資交易所上市的上市公司,從事石墨開採業務,以及開發和商業化創新的石墨烯和石墨應用和產品。衆所周知,在斯里蘭卡開採的石墨是世界上品位最高的石墨之一,已被證實適合於一系列應用,包括高增長的電動汽車和電池存儲市場以及建築、醫療保健和油漆和塗料領域。斯里蘭卡政府已批准 錫蘭的 全資子公司Sarcon Development(Pvt)Ltd.爲其K1礦山和勘探權提供了IML A類許可證,其土地面積超過120平方公里。這些勘探網格(每個網格面積爲一平方千米)覆蓋了二十世紀初歷史上石墨生產的地區,代表了斯里蘭卡已知的大部分石墨礦點。
有關錫蘭的更多信息,請訪問
首席執行官薩莎·雅各布和董事會主席麗塔·泰爾
info@ceylongraphite.com
企業傳播
+1 (604) 924-8695
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前瞻性陳述:
本新聞稿包含前瞻性信息,該術語在適用的證券法中定義,這些信息與未來事件或未來業績有關,反映了管理層當前的預期和假設。前瞻性信息包括陳述 關於 用錫蘭石墨生產的石墨烯墨水的潛在價值, 未來石墨烯墨水技術的應用,錫蘭作爲潛在市場領導者的角色 在石墨烯墨水技術製備中, 與錫蘭房地產開發、戰略合作伙伴關係、潛在客戶和銷售相關的期望、錫蘭子公司的計劃以及 錫蘭的 採礦作業。此類前瞻性陳述反映了管理層目前的信念,並基於錫蘭e所做的假設和目前獲得的信息,包括這樣的假設, 沒有影響M1礦開發和生產或其他財產的重大不利變化, 與測試相關 的表現 塞洛n's 靜脈石墨材料是準確的, 不會有重大不利的變化 石墨和金屬 價格, 對石墨動力電池的需求將持續增長, 將獲得所有必要的同意、執照、許可證和批准,包括各種地方政府許可證。 提醒投資者,這些前瞻性陳述既不是承諾也不是擔保,存在風險和不確定性,可能導致未來的業績與預期的業績存在重大差異。可能導致實際結果與前瞻性信息所表達或暗示的結果存在重大差異的風險因素包括: 錫蘭石墨測試的結果不準確或不完整, 石墨烯墨水相關技術的市場 沒有像預期的那樣發展, 未能獲得或保持專利和專有技術,損失或未能獲得現有的高質量石墨, 一個紐約 失敗s 獲得或延遲獲得所需的監管許可、許可證、批准和同意,無法根據需要獲得融資,經濟普遍衰退,股價波動,勞工罷工,政治動盪,錫蘭礦業監管制度的變化,不遵守環境法規以及市場和行業對高質量石墨的依賴減弱。錫蘭提醒讀者,上面的風險因素清單並不詳盡。
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