Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation
First systems developed by EPFL featuring GeneSiC 3300V and 1200V SiC devices showcase the strength of Navitas' Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers.
由洛桑聯邦理工學院(EPFL)開發的首個採用GeneSiC 3300V和1200V碳化硅器件的系統,展示了納微半導體電網與能源基礎設施產品組合的實力,加速了800V直流AI數據中心的普及。
Torrance, CA and Lausanne, Switzerland– March 4th 2026 — Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe's most cosmopolitan technical university, announced exhibition of a 250kW SST solution at APEC 2026 in San Antonio Texas.
加利福尼亞州託倫斯和瑞士洛桑——2026年3月4日——納微半導體(納斯達克:NVTS),作爲氮化鎵(GaN)和碳化硅(SiC)功率半導體的領導者,與歐洲最具國際化特色的理工大學——洛桑聯邦理工學院(École Polytechnique Fédérale de Lausanne,簡稱EPFL)共同宣佈,將在2026年德克薩斯州聖安東尼奧舉行的APEC會議上展示一款250kW的SST解決方案。
The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency. EPFL design uses single stage, modularized bridge rectifier SST topology for converting 3.3kV-AC to 800V-DC at 250 kW power and delivers enhanced performance and modularity. This is built using Navitas GeneSiC ultra-high voltage (UHV) 3300V and high voltage (HV) 1200V Silicon Carbide (SiC) Trench-Assisted Planar (TAP) MOSFETs and modules. The SST demonstrator is developed as part of the Power Electronics Laboratory's project HeatingBits, aiming to deploy and showcase the latest technologies inside the EPFL's actual data center.
由洛桑聯邦理工學院(EPFL)電力電子實驗室開發的固態變壓器(SST)平台實現了下一代數據中心所需的電網架構,消除了笨重的低頻變壓器,同時提高了端到端效率。EPFL的設計採用了單級模塊化的橋式整流器SST拓撲結構,可將3.3kV交流電轉換爲250kW功率下的800V直流電,並提供增強的性能和模塊化。該設計基於Navitas GeneSiC超高電壓(UHV)3300V和高壓(HV)1200V碳化硅(SiC)溝槽輔助平面(TAP)MOSFET和模塊構建。這一固態變壓器演示裝置是電力電子實驗室HeatingBits項目的一部分,旨在在EPFL的實際數據中心內部署並展示最新技術。
"This engagement with EPFL demonstrates how next-generation medium-voltage power conversion can directly address the growing energy and thermal challenges inside AI data centers," said Paul Wheeler, VP & GM of the SiC business unit at Navitas. "By combining our 3300V and 1200V GeneSiC MOSFETs and modules with a novel single-stage solid-state transformer architecture and advanced real-time control, we are enabling a scalable 800 V-DC distribution approach that delivers higher efficiency from the grid to the rack while creating new opportunities for heat reuse."
「這次與洛桑聯邦理工學院(EPFL)的合作表明,下一代中壓電力轉換可以直接應對AI數據中心內日益增長的能源和熱管理挑戰,」Paul Wheeler, Navitas SiC業務部副總裁兼總經理表示,「通過將我們的3300V和1200V GeneSiC MOSFET及模塊與新型單級固態變壓器架構和先進的實時控制相結合,我們正在實現一種可擴展的800V直流配電方法,從電網到機架都提供了更高的效率,同時爲熱量再利用創造了新機會。」
"This novel solid-state transformer platform provides a galvanically isolated, flexible, scalable, and efficient interface between the medium-voltage AC grid and an 800 V-DC data center architecture, while serving as a real-world experimental environment for advanced distributed control," said Drazen Dujic, Associate Professor and Director of the Power Electronics Laboratory at EPFL. "By leveraging Navitas UHV and HV SiC MOSFETs portfolio, EPFL was able to optimize system performance for the highest efficiency and optimal design margins for system robustness and reliability."
「這種新型固態變壓器平台爲中壓交流電網和800V直流數據中心架構之間提供了電氣隔離、靈活、可擴展且高效的接口,同時爲先進的分佈式控制提供了現實世界的實驗環境,」 洛桑聯邦理工學院(EPFL)電力電子實驗室主任兼副教授Drazen Dujic表示,「通過利用Navitas的超高電壓(UHV)和高壓(HV)SiC MOSFET產品組合,EPFL能夠優化系統性能以實現最高效率,並確保系統穩健性和可靠性方面的最佳設計裕度。」
APEC takes place from 22-26 March in San Antonio, TX. Representatives from both Navitas and the EPFL's Power Electronics Laboratory will be available for further information at the Navitas booth #2027. Navitas can also be reached by email at info@navitassemi.com.
APEC將於3月22日至26日在德克薩斯州聖安東尼奧舉行。Navitas和洛桑聯邦理工學院(EPFL)電力電子實驗室的代表將在Navitas展位#2027提供更多信息。您也可以通過電子郵件info@navitassemi.com聯繫Navitas。
About Navitas
關於Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world's first semiconductor company to be CarbonNeutral-certified.
納維塔斯半導體(納斯達克股票代碼:NVTS)是氮化鎵(GaN)與集成電路一體化器件以及高壓碳化硅(SiC)技術領域的下一代功率半導體領軍企業,致力於推動人工智能數據中心、能源與電網基礎設施、高性能計算以及工業電氣化的創新發展。憑藉在寬禁帶技術領域逾30年的深厚積澱,GaNFast功率IC集成了GaN功率、驅動、控制、傳感與保護等功能,可實現更快速的電力輸送、更高的系統集成度以及更卓越的能效。GeneSiC高壓SiC器件採用專利的溝槽輔助平面工藝,爲中壓電網及基礎設施應用提供了業界領先的電壓耐受能力、效率與可靠性。納維塔斯已獲授權或正在申請的專利超過300項,同時也是全球首家獲得CarbonNeutral認證的半導體公司。
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
納微半導體、GaNFast、GaNSense、GeneSiC 以及納微半導體的標誌是納微半導體有限公司及其關聯公司的商標或註冊商標。所有其他品牌、產品名稱和標誌均爲或可能是用於標識其各自所有者的產品或服務的商標或註冊商標。
About EPFL
關於洛桑聯邦理工學院(EPFL)
The École Polytechnique Fédérale de Lausanne (EPFL) is a prestigious public research university in Switzerland, renowned for its excellence in science, technology, engineering, and mathematics (STEM) fields. It offers education at Bachelor's, Master's, and Doctoral levels and is home to more than 500 laboratories, with students, professors, and collaborators of more than 120 nationalities. Located on the shores of Lake Geneva, it is a vibrant, cosmopolitan institution that consistently ranks among the top universities in the world. EPFL collaborates with an important network of partners, including other universities and colleges, secondary schools and gymnasiums, industry and the economy, political circles, and the general public, with the aim of having a real impact on society.
洛桑聯邦理工學院(EPFL)是瑞士一所享有盛譽的公立研究型大學,以其在科學、技術、工程和數學(STEM)領域的卓越表現而聞名。該校提供本科、碩士和博士層次的教育,並擁有500多個實驗室,學生、教授和合作者來自120多個國家。學校位於日內瓦湖畔,是一所充滿活力的國際化機構,一直位居世界頂尖大學之列。EPFL與衆多重要合作伙伴建立了廣泛的網絡,包括其他大學和學院、中學和文理中學、工業界和經濟界、政界以及公衆,目標是對社會產生真正的影響。
Navitas Contact Information
納微半導體聯繫方式
Navitas Semiconductor
納微半導體
Vipin Bothra
Vipin Bothra
info@navitassemi.com
info@navitassemi.com
Navitas Investor Contacts
納微投資者聯繫人
Leanne Sievers | Brett Perry
Leanne Sievers|Brett Perry
Shelton Group
Shelton Group
sheltonir@sheltongroup.com
sheltonir@sheltongroup.com
EPFL Contact Information
EPFL 聯繫方式
Prof. Drazen Dujic
Prof.Drazen Dujic
Power Electronics Laboratory, EPFL
EPFL 電力電子實驗室
drazen.dujic@epfl.ch
drazen.dujic@epfl.ch
Cautionary Statement Regarding Forward-Looking Statements
關於前瞻性陳述的警示性聲明
This press release includes "forward-looking statements" within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as "we expect" or "are expected to be," "estimate," "plan," "project," "forecast," "intend," "anticipate," "believe," "seek," or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and EPFL and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and EPFL, and forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. These and other risk factors are discussed in the Risk Factors section of our respective annual reports on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents each of us may file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.
本新聞稿包含根據修訂後的《1934年證券交易法》第21E條定義的「前瞻性陳述」。前瞻性陳述旨在預測或表明未來事件或趨勢,或類似的非歷史事實的陳述。前瞻性陳述可以通過諸如「我們預計」、「預計將要」、「估計」、「計劃」、「預測」、「意圖」、「預期」、「相信」、「尋求」或其他類似表達來識別。前瞻性陳述基於對財務和績效指標的估算和預測、市場機會和市場份額的預測以及當前的客戶興趣跡象作出,所有這些都基於各種假設,無論是否在本新聞稿中提及。所有此類陳述均基於Navitas和EPFL管理層的當前預期,並不代表實際未來的業績預測。前瞻性陳述僅用於說明目的,不得被任何投資者用作保證、擔保、預測或明確的事實或概率聲明。實際事件和情況難以或不可能預測,並將與假設和期望有所不同。影響業績的許多實際事件和情況超出了Navitas和EPFL的控制範圍,且前瞻性陳述受到諸多不確定性因素的影響。我們的業務存在某些風險,可能會對我們各自的業務、財務狀況、經營結果或證券價值造成重大和不利影響。這些及其他風險因素在我們各自年度報告Form 10-K的風險因素部分進行了討論,並在最近季度報告Form 10-Q的風險因素部分進行了更新,同時可能在我們向美國證券交易委員會(SEC)提交的其他文件中進行說明。如果我們在SEC報告中詳細討論的任何這些風險成爲現實,或者我們作爲前瞻性陳述基礎的假設證明不正確,實際結果可能會與這些前瞻性陳述所暗示的結果有重大差異。
譯文內容由第三人軟體翻譯。