STMicroelectronics' STGAP3S Advanced Galvanically Isolated Gate Drivers Feature Flexible Protection for IGBTs and SiC MOSFETs
STMicroelectronics' STGAP3S Advanced Galvanically Isolated Gate Drivers Feature Flexible Protection for IGBTs and SiC MOSFETs
The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage.STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST's latest robust galvanic isolation technology with optimized desaturation protection and flexible Miller-clamp architecture.
意法半導體的STGAP3S系列門極驅動器適用於碳化硅（SiC）和IGBt功率開關，將ST最新的強大電氣隔離技術與優化的去飽和保護和靈活的米勒夾持結構相結合。
Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands 9.6kV transient isolation voltage (VIOTM) with 200V/ns common-mode transient immunity (CMTI). With its state-of-the-art isolation, the STGAP3S enhances reliability in motor drives for industrial applications such as air conditioning, factory automation, and home appliances. The new drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters, and solar inverters.
STGAP3S具有在門極駕駛通道與低壓控制及接口電路之間的增強型電容隔離，可承受9.6kV瞬態隔離電壓（VIOTM），具備200V/ns共模瞬態抑制（CMTI）。憑藉其最先進的隔離技術，STGAP3S提高了工業應用中如空調、工廠自動化和家電股等領域的電機驅動可靠性。這些新驅動器還用於包括充電站、能源儲存系統、功率因數校正（PFC）、DC/DC變換器和太陽能逆變器在內的功率和能源應用。
The STGAP3S product family includes different options with 10A and 6A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches.
STGAP3S產品系列包括不同的選項，具有10A和6A電流能力，每個選項都配備有區分的欠壓鎖定（UVLO）和去飽和介入閾值。這有助於設計人員選擇最適合其選擇的SiC MOSFEt或IGBt功率開關性能的最佳設備。
The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage.
去飽和保護爲外部功率開關實現了過載和短路保護，提供了通過外部電阻調整關斷策略的可能性，以實現最大化保護關斷速度，並避免過高的過電壓尖峯。欠壓鎖定保護可防止在電壓不足的情況下進行打開。
The driver's integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. Designers can thus leverage flexibility to select a suitable intervention speed that prevents induced turn-on and avoids cross conduction.
驅動器集成的米勒夾持結構爲外部N溝道MOSFEt提供了一個預驅動器。設計人員因此可以靈活選擇適當的干預速度，以防止感應開啓並避免交叉導通。
The available device variants allow a choice of 10A sink/source and 6A sink/source drive-current capability for optimum performance with the chosen power switch with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins.
可用的設備變種允許選擇10A匯/源和6A匯/源驅動電流能力，以與所選擇的功率開關兼容，配備了針對IGBt或SiC技術優化的去飽和檢測和UVLO閾值。去飽和、UVLO和過溫保護的故障狀況通過兩個專用的開漏診斷引腳進行通知。
The STGAP3SXS is in production now, in the SO-16W wide-body package, from $2.34 for orders of 1000 pieces. Please contact your ST sales office for pricing options and sample requests.
STGAP3SXS目前正在生產，採用SO-16W寬體封裝，1000件起售價爲$2.34。請聯繫您的St銷售辦公室了解定價選項和樣品請求。
Please visit or more information.
請訪問 或獲取更多信息。
譯文內容由第三人軟體翻譯。
