Keihin Ramtech "RAMFORCE" Sputtering Technology Is a Game Changer That Will Revolutionize Perovskite Solar Cell Industry
Keihin Ramtech "RAMFORCE" Sputtering Technology Is a Game Changer That Will Revolutionize Perovskite Solar Cell Industry
YOKOHAMA, Japan, April 24, 2023 /PRNewswire/ -- KEIHIN RAMTECH Co.,Ltd. will attend SVC TechCon2023 in Washington, D.C.
日本橫濱， 2023年4月24日 /PRNewswire/ — 株式會社京濱 RAMTECH, Ltd. 將參加 SVC TechCon2023 華盛頓特區
As part of the fight against global warming concerns, energy sources that do not rely on fossil fuels are major subjects. Expectations for solar cells are also high. Perovskite solar cells (PSC), which have attracted particular attention, are in particularly high demand in the market and are attracting attention as next-generation solar cells. Perovskite is a device structure consisting of very delicate organic layers in cells, and conventional technologies using dry process sputtering methods cause damage to the transparent conductive oxide (TCO) film when deposited, resulting in degradation of the organic layers, which prevents the desired device characteristics from being achieved. It has been difficult to use sputter deposition for TCO.
作爲應對全球變暖問題的一部分，不依賴化石燃料的能源是主要課題。對太陽能電池的期望也很高。鈣鈦礦太陽能電池（PSC）引起了特別關注，在市場上需求特別高，並且作爲下一代太陽能電池引起了人們的關注。鈣鈦礦是一種由細胞中非常脆弱的有機層組成的器件結構，使用幹法濺射方法的傳統技術在沉積時會損壞透明導電氧化物（TCO）薄膜，從而導致有機層降解，從而無法實現所需的器件特性。使用濺射沉積來處理 TCO 一直很困難。
Advantages of RAM FORCE Sputtering
RAM FORCE 濺射的優點
Improved sputtering deposition characteristics for perovskite solar cells
改善鈣鈦礦太陽能電池的濺射沉積特性
RAM FORCE, which has a unique structure by four facing targets and magnetic field arrangement have realized low-damage deposition, and in the case of TCO deposition on PSC, the carrier lifetime, which is a guideline for damage, has been improved by about 30% compared to planar sputtering equipment. The low-damage property has been utilized to achieve low-damage deposition. By taking advantage of the low-damage sputtering characteristics, the PSC achieves a Fill Factor (FF) of more than 75%, which is a curve factor representing cell characteristics. It has begun to be used in R&D applications and pilot lines.
RAM FORCE 具有由四個朝向目標構成的獨特結構和磁場排列，實現了低損傷沉積，就在 PSC 上沉積的 TCO 而言，作爲損傷指導值的載流子壽命比平面濺射設備延長了約 30%。低損傷特性已用於實現低損傷沉積。通過利用低損傷濺射特性，PSC 實現了超過 75% 的填充係數 (FF)，這是代表細胞特性的曲線因子。它已開始用於研發應用和試驗線。
Realization of low-temperature sputtering deposition
實現低溫濺射沉積
RAM FORCE enables a low-temperature deposition at less than 60°C (ITO: 100 nm), and thus it is applicable to sputtering deposition on flexible substrates.
RAM FORCE 可在低於 60°C（ITO：100 nm）的低溫沉積，因此適用於柔性基板上的濺射沉積。
Future Development of RAM FORCE
RAM FORCE 的未來發展
RAMTECH is also focusing on other applications. For the hole transport layer (HTL) of PSC, NiOx layer can be used instead of the currently used organic layer such as Spiro-OMeTAD to realize low-damage sputter deposition and low resistance. Furthermore, by changing the deposition process conditions, NiOx can also be deposited as the electron transport layer (ETL), making it possible to use the same material for both HTL and ETL deposition, thereby improving characteristics and reducing costs.
RAMTECH 還專注於其他應用。對於PSC的空穴傳輸層（HTL），可以使用NiOx層代替目前使用的有機層，例如Spiro-Ometad，以實現低損傷濺射沉積和低電阻。此外，通過改變沉積過程條件，還可以將NiOx作爲電子傳輸層（ETL）沉積，從而有可能使用相同的材料進行HTL和ETL沉積，從而改善特性並降低成本。
KEIHIN RAMTECH Co.,Ltd.
株式會社京濱 RAMTECH，有限公司
R&D Center Tetsuya Saruwatari
研發中心 猿渡哲也
[email protected]
[電子郵件保護]
SOURCE KEIHIN RAMTECH Co.,Ltd.
來源 KEIHIN RAMTECH Co.，有限公司
譯文內容由第三人軟體翻譯。