New class of materials offer improved conductivity and thermal management properties

ANDOVER, Mass., Oct. 2, 2024 /PRNewswire/ -- Raytheon, an RTX (NYSE:RTX) business, has been awarded a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors, or UWBGS, based on diamond and aluminum nitride technology that revolutionize semiconductor electronics with increased power delivery and thermal management in sensors and other electronic applications.

During phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminum nitride technology onto larger diameter wafers for sensor applications.