Zhitong Financial APP learned that a few days ago, two research papers on gallium oxide devices (high power gallium oxide Schottky diodes and gallium oxide photodetectors) by Professor long Shibing of the National demonstration School of Microelectronics of the University of Science and Technology of China were received at the 68th International Congress of Electronic Devices (IEEE IEDM) held in San Francisco, USA. This is also the first time that China University of Science and Technology has published a paper at the International Conference on Electronic Devices as the first author unit. Professionals point out that gallium oxide is one of the materials most likely to shine in the future, in the next 10 years or so.Gallium oxide devices are likely to become competitive power electronic devices and compete directly with silicon carbide devices.
It is reported that gallium oxide (Ga2O3) is a new type of ultra-wide band gap semiconductor material, which is widely concerned and recognized by the world as the fourth generation semiconductor material which has started industrialization. Compared with silicon carbide and gallium nitride, gallium oxide based power devices have the characteristics of high voltage withstand, low loss, high efficiency, small size and so on. Gallium oxide has great potential for application in ultra-high power devices because its substrate is easier to make than SiC and GaN, and because of its ultra-wide band gap, the material can withstand higher collapse voltage and critical electric field.
It is understood that the larger the width of the band gap, the more can increase the peak voltage that the wide band gap device can withstand, and the output power of the device can be greatly improved. At the same time, the larger the band gap is, the higher the chemical stability of the device is, so that the power device can work in a worse environment, and the stability and reliability of the system are greatly improved.
Gallium nitride usually grows on silicon, silicon carbide or sapphire substrates by complex processes. However, the crystal structure of these substrates is obviously different from that of gallium nitride, which can cause a "lattice mismatch" between the substrate and gallium nitride, resulting in a large number of defects, such as causing the charge to get stuck. Gallium oxide is used as its own substrate, so there is no mismatch, so there are no defects. It is based on the high adaptability of gallium oxide that users can borrow a variety of existing commercial lithography and processing technologies.Large gallium oxide wafers are made as needed, and large wafers mean a significant reduction in cost.
Gallium oxide was previously used in optoelectronic applications, and until 2012, it was more expected to be used in power devices, and 80% of the world's research units are moving in this direction.In recent years, gallium oxide semiconductors have become the focus of international semiconductor research and the commanding height of technological competition among big countries.
This year, China's Ministry of Science and Technology listed gallium oxide in the "14th five-year key R & D Plan", so that the fourth-generation semiconductors get more attention. On May 10th, Hangzhou Science and Technology Center of Zhejiang University successfully fabricated 2-inch (50.8 mm) gallium oxide wafers using a new technology route, and this is the first time in the world that 2-inch gallium oxide wafers with completely independent intellectual property rights have been grown.
It is reported that gallium oxide materials to Zhongdian 46, Shandong University, Shenzhen Evolutionary Semiconductors, the Chinese Academy of Sciences Shanghai Institute of Optics and Machinery, Beijing Gallium Technology, Hangzhou Fujia Gallium Industry and other units as the main force. It is worth noting thatEvolutionary semiconductors sayA 6-inch gallium oxide material is being developed and should be available in small batches of 2-inch materials this year.
In addition, according to previous market news, recently, Beijing Minggallium Semiconductor Co., Ltd. (referred to as "Minggallium Semiconductor") successfully prepared high-quality 4-inch gallium oxide (β-Ga2O3) single crystals by guided mode method, completed a technical breakthrough in 4-inch gallium oxide wafer substrate, and carried out many repetitive experiments.It has become the first industrialization company in China to master the growth technology of 4-inch (001) phase single crystal substrate of the fourth generation semiconductor gallium oxide material.
On June 30, Ming Gallium Semiconductor completed nearly 100 million yuan A round of financing, this round of financing will be mainly used for gallium oxide project expansion and research and development.It is expected that the first complete gallium oxide industry line integrating crystal growth, crystal processing and thin film epitaxy will be completed by the end of 2023.
On August 1, Shunyi Kechuang Group signed a lease contract with Ming Gallium Semiconductor, transforming the retired 989 square meters old factory building into a gallium oxide supporting laboratory. It is worth noting that the expansion of gallium oxide processing line and clean room landing industrial park is the first step in the expansion of Ming Gallium Semiconductor. After the completion of the production expansion plan at the end of 2023, Ming Gallium Semiconductor will build the above industrial line and become a large-scale gallium oxide material enterprise with an annual output of thousands of pieces.To meet the material supply needs of more than 100 downstream device design, manufacturing and packaging industrial enterprises and scientific research institutes.
Related concept stocks:
New Lake Zhongbao (600208.SH): the company holds a 22% equity interest in Hangzhou Fujia Gallium Industry Technology Co., Ltd. Fujia Gallium Industry relies on Shanghai Institute of Optics and Mechanics of the Chinese Academy of Sciences to focus on the research of new semiconductor material-gallium oxide (Ga2O3). At present, the crystal preparation based on β gallium oxide and the development of power devices have made some progress.
Zhongxin Group (601512.SH): wholly-owned Suzhou Zhongxinyuan first phase equity investment partnership (limited partnership) participates in Suzhou Navi Technology Co., Ltd., the latter's wholly-owned subsidiary Shanghai Yidan Electronic Information Co., Ltd. has a patent: a Ga2O3-based metal oxide semiconductor field effect transistor with good heat dissipation and its preparation method.
Aerospace Electronics (600879.SH): wholly-owned subsidiary Beijing time Minxin Technology Co., Ltd. radiation-resistant GaN/Ga2O3 Cascode cascade enhanced power devices and their manufacturing methods, monolithic integrated GaN/Ga2O3 Cascode enhanced single particle burnout devices and their preparation methods, single particle effect reinforced printed transfer GaN/Ga2O3 Cascode power devices have all entered the substantive examination stage.
Sanan Optoelectronics (600703.SH): subsidiary Hunan Sanan is committed to the development of third-generation compound semiconductor silicon carbide and gallium oxide materials, epitaxy, chips and packaging, occupying the commanding heights in the core field of the third-generation semiconductors.
Shenzhen Huaqiang (000062.SZ): through the participation of Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd. indirectly shares in Liuyang Tyco Tianrun Semiconductor Technology Co., Ltd., Liuyang Tyco Tianrun has the patent based on Ga2O3 voltage and current withstand SiCPIN diode.
(601179.SH): Shaanxi Semiconductor pilot Technology Center is the national engineering research center in the field of wide band gap semiconductors, and the wide band gap semiconductor high-end equipment cooperates with the new material Xi'an Engineering Research Center for high-end preparation equipment of gallium nitride, diamond and gallium oxide and research and development of semiconductor materials.