Recently, Intel foundry announced major breakthroughs in chip interconnect technology. Through the company's latest subtractive Ruthenium interconnect technology, interline capacitance can be reduced by up to 25%, effectively improving chip interconnect. It is reported that subtractive Ruthenium interconnect technology, by using Ruthenium as a new, key, alternative metallization material, achieves significant progress in interconnect miniaturization through thin film resistivity and air gap. This process does not require the expensive lithographic airgap exclusion zone around vias, and can also avoid the use of self-aligned vias with selective etching. When the spacing is less than or equal to 25 nanometers, the air gap enabled by subtractive Ruthenium interconnect technology reduces interline capacitance by up to 25%. It can replace the Copper plating process as a metallization solution in closely spaced layers. This solution is expected to be applied in future process nodes of Intel foundry. (Sina Technology)